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Browsing by Author "Jackman, Richard B."
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Electronic properties of homoepytaxial (111) highly Boron-doped diamond films
Ye, Haitao; Tumilty, Niall; Bevilacqua, Mose; Curat, Stephane; Nesladek, Milos; Bazin, Bertrand; Bergonzo, Philippe; Jackman, Richard B. (2009)The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus ... -
Extreme sensitivity displayed by single-crystal diamond deep ultra-violet photoconductive devices
Bevilacqua, Mose; Jackman, Richard B. (2009)Deep UV detection using a single crystal diamond (SCD) substrate without a homoepitaxial layer has been demonstrated using a defect passivation treatment. Despite evidence of surface damage on the SCD, the treatments lead ... -
The influence of Ammonia on the electrical properties of detonation nanodiamond
Bevilacqua, Mose; Chaudhary, Aysha; Jackman, Richard B. (2009-12-01)Detonation nanodiamonds (DNDs) are an interesting class of materials for sensing applications, but little is currently understood about their electrical properties. Here, aggregated DNDs are explored with impedance ... -
Nanocrystalline diamond as an electronic material : an impedance spectroscopic study and Hall effect measurement study
Bevilacqua, Mose; Tumilty, Niall; Mitra, Chiranjib; Ye, Haitao; Feygelson, Tatayana; Butler, James E.; Jackman, Richard B. (2010)Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped ...