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dc.contributor.authorMa, Minglin
dc.contributor.authorCai, Xinglong
dc.contributor.authorSun, Yichuang
dc.date.accessioned2018-11-02T11:37:29Z
dc.date.available2018-11-02T11:37:29Z
dc.date.issued2017-09-19
dc.identifier.citationMa , M , Cai , X & Sun , Y 2017 , ' A High Efficiency and Low Ripple Cross-Coupled Charge Pump Circuit ' , Paper presented at Oxford Circuits and Systems Conference, Oxford, September 2017 , 19/09/17 . < http://www.eng.ox.ac.uk/mcad/images/ABSTRACT_ORAL5.pdf >
dc.identifier.citationconference
dc.identifier.urihttp://hdl.handle.net/2299/20777
dc.description.abstractA fully integrated cross-coupled charge pump circuit with four-clock signals and a new method of body bias have been proposed. The new clock scheme eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the supply voltage. We have also solved the gate-oxide overstress problem in the conventional charge pump circuits and enhanced the reliability. The proposed charge pump circuit has been simulated using Spectre and in the TSMC 0.18um CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5V is 99.8%. Moreover, the output ripple voltage has been significantly reduced.en
dc.format.extent197187
dc.language.isoeng
dc.titleA High Efficiency and Low Ripple Cross-Coupled Charge Pump Circuiten
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionRadio and Mobile Communication Systems
dc.contributor.institutionSmart Electronics Devices and Networks
dc.contributor.institutionSchool of Engineering and Technology
dc.description.statusPeer reviewed
dc.identifier.urlhttp://www.eng.ox.ac.uk/mcad/images/ABSTRACT_ORAL5.pdf
rioxxterms.typeOther
herts.preservation.rarelyaccessedtrue


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