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Electronic properties of homoepytaxial (111) highly Boron-doped diamond films
Ye, Haitao; Tumilty, Niall; Bevilacqua, Mose; Curat, Stephane; Nesladek, Milos; Bazin, Bertrand; Bergonzo, Philippe; Jackman, Richard B. (2009)The use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus ...