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dc.contributor.authorChrysanthou, A.
dc.contributor.authorGrieveson, P.
dc.contributor.authorJha, A.
dc.date.accessioned2013-04-23T15:05:02Z
dc.date.available2013-04-23T15:05:02Z
dc.date.issued1991-01-01
dc.identifier.citationChrysanthou , A , Grieveson , P & Jha , A 1991 , ' Formation of silicon carbide whiskers and their microstructure ' , Journal of Materials Science , vol. 26 , no. 13 , pp. 3463-3476 . https://doi.org/10.1007/BF00557132
dc.identifier.issn0022-2461
dc.identifier.otherPURE: 1054859
dc.identifier.otherPURE UUID: c93b5309-ec9d-4dc0-86f9-0d9acd08e25c
dc.identifier.otherScopus: 0026097109
dc.identifier.urihttp://hdl.handle.net/2299/10488
dc.descriptionCopyright 2007 Elsevier B.V., All rights reserved.
dc.description.abstractThermodynamic and kinetic conditions for the formation of SiC whiskers are established. The mechanism of their nucleation and growth are studied and, on this basis, the magnitude of the thermally activated barrier is determined from the rate of reduction data. The microstructures of whiskers are analysed and the role of interfacial tension between the nuclei and impurities, and the metallic iron catalyst is studied in relation to the formation of SiC whiskers. A possible reason for polytypism in SiC whiskers is also proposed.en
dc.format.extent14
dc.language.isoeng
dc.relation.ispartofJournal of Materials Science
dc.titleFormation of silicon carbide whiskers and their microstructureen
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionMaterials and Structures
dc.contributor.institutionSchool of Engineering and Computer Science
dc.contributor.institutionDepartment of Engineering and Technology
dc.description.statusPeer reviewed
dc.relation.schoolSchool of Engineering and Computer Science
dcterms.dateAccepted1991-01-01
rioxxterms.versionofrecordhttps://doi.org/10.1007/BF00557132
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue


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