Nanocrystalline diamond as an electronic material : an impedance spectroscopic study and Hall effect measurement study

Abstract

Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall effect measurements. For intrinsic material, both grain boundaries and grains themselves initially contribute to the frequency dependant impedance values recorded. However, boundary conduction can be removed and the films become highly resistive. Interestingly, the ac properties of these films are also excellent with a dielectric loss value ∼ 0.004 for frequencies up to 10 MHz. The dielectric properties of these NCD films are therefore as good as high quality large grain polycrystalline diamond films. In the case of boron-doped material, p-type material with good carrier mobility values (10–50 cm2/V s) can be produced at carrier concentrations around 1017 cm−3