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dc.contributor.authorBevilacqua, Mose
dc.contributor.authorTumilty, Niall
dc.contributor.authorMitra, Chiranjib
dc.contributor.authorYe, Haitao
dc.contributor.authorFeygelson, Tatayana
dc.contributor.authorButler, James E.
dc.contributor.authorJackman, Richard B.
dc.identifier.citationBevilacqua , M , Tumilty , N , Mitra , C , Ye , H , Feygelson , T , Butler , J E & Jackman , R B 2010 , ' Nanocrystalline diamond as an electronic material : an impedance spectroscopic study and Hall effect measurement study ' , Journal of Applied Physics , vol. 107 , no. 3 , 033716 .
dc.identifier.otherPURE: 2231557
dc.identifier.otherPURE UUID: 7e2b0a0f-b8a3-4363-b529-e1c13f0210e0
dc.identifier.otherScopus: 76949108492
dc.description.abstractNanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall effect measurements. For intrinsic material, both grain boundaries and grains themselves initially contribute to the frequency dependant impedance values recorded. However, boundary conduction can be removed and the films become highly resistive. Interestingly, the ac properties of these films are also excellent with a dielectric loss value ∼ 0.004 for frequencies up to 10 MHz. The dielectric properties of these NCD films are therefore as good as high quality large grain polycrystalline diamond films. In the case of boron-doped material, p-type material with good carrier mobility values (10–50 cm2/V s) can be produced at carrier concentrations around 1017 cm−3en
dc.relation.ispartofJournal of Applied Physics
dc.subjectNanocrystalline diamond, Impedance Spectroscopy, Hall effect
dc.titleNanocrystalline diamond as an electronic material : an impedance spectroscopic study and Hall effect measurement studyen
dc.contributor.institutionMaterials and Structures
dc.contributor.institutionSchool of Engineering and Computer Science
dc.contributor.institutionDepartment of Engineering and Technology
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionEnergy and Sustainable Design
dc.description.statusPeer reviewed
rioxxterms.typeJournal Article/Review

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