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dc.contributor.authorYe, Haitao
dc.contributor.authorTumilty, Niall
dc.contributor.authorBevilacqua, Mose
dc.contributor.authorCurat, Stephane
dc.contributor.authorNesladek, Milos
dc.contributor.authorBazin, Bertrand
dc.contributor.authorBergonzo, Philippe
dc.contributor.authorJackman, Richard B.
dc.date.accessioned2013-09-23T13:45:06Z
dc.date.available2013-09-23T13:45:06Z
dc.date.issued2009
dc.identifier.citationYe , H , Tumilty , N , Bevilacqua , M , Curat , S , Nesladek , M , Bazin , B , Bergonzo , P & Jackman , R B 2009 , ' Electronic properties of homoepytaxial (111) highly Boron-doped diamond films ' , Journal of Applied Physics , vol. 103 , no. 5 , 054503 . https://doi.org/10.1063/1.2837114
dc.identifier.issn0021-8979
dc.identifier.otherPURE: 2231591
dc.identifier.otherPURE UUID: ae814557-bb3c-449a-94bc-f31671e8de0d
dc.identifier.otherScopus: 40849085440
dc.identifier.urihttp://hdl.handle.net/2299/11630
dc.description.abstractThe use of diamond as a semiconductor for the realization of transistor structures, which can operate at high temperatures (>700 K), is of increasing interest. In terms of bipolar devices, the growth of n-type phosphorus doped diamond is more efficient on the (111) growth plane; p-type boron-doped diamond growth has been most usually grown in the (100) direction and, hence, this study into the electronic properties, at high temperatures, of boron-doped diamond (111) homoepitaxial layers. It is shown that highly doped layers (hole carrier concentrations as high as 2×1020 cm−3) can be produced without promoting the onset of (unwanted) hopping conduction. The persistence of valance-band conduction in these films enables relatively high mobility values to be measured ( ∼ 20 cm2/V s) and, intriguingly, these values are not significantly reduced at high temperatures. The layers also display very low compensation levels, a fact that may explain the high mobility values since compensation is required for hopping conduction. The results are discussed in terms of the potential of these types of layers for use with high temperature compatible diamond transistorsen
dc.format.extent7
dc.language.isoeng
dc.relation.ispartofJournal of Applied Physics
dc.titleElectronic properties of homoepytaxial (111) highly Boron-doped diamond filmsen
dc.contributor.institutionMaterials and Structures
dc.contributor.institutionSchool of Engineering and Computer Science
dc.contributor.institutionDepartment of Engineering and Technology
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionEnergy and Sustainable Design
dc.description.statusPeer reviewed
rioxxterms.versionofrecordhttps://doi.org/10.1063/1.2837114
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue


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