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dc.contributor.authorLi, Y.
dc.contributor.authorKaviraj, S.
dc.contributor.authorBerenov, A.
dc.contributor.authorPerkins, G.K.
dc.contributor.authorDriscoll, J.
dc.contributor.authorCaplin, A.D.
dc.contributor.authorCao, G.H.
dc.contributor.authorMa, Q.Z.
dc.contributor.authorWang, B.
dc.contributor.authorWei, L.
dc.contributor.authorZhao, Z.X.
dc.identifier.citationLi , Y , Kaviraj , S , Berenov , A , Perkins , G K , Driscoll , J , Caplin , A D , Cao , G H , Ma , Q Z , Wang , B , Wei , L & Zhao , Z X 2001 , ' Enhancement of critical current density of (Pb,Sn)-doped Bi-2212 superconductors at high temperature ' , Physica C: Superconductivity and its Applications , vol. 355 , no. 1-2 , pp. 51-58 .
dc.identifier.otherPURE: 2065119
dc.identifier.otherPURE UUID: be0cb726-0b2f-4678-866b-0b731c961d5d
dc.identifier.otherScopus: 0035367179
dc.identifier.otherORCID: /0000-0002-5601-575X/work/77850210
dc.description.abstractThe magnetic properties of ceramic samples of Bi(PbSn)SrCaCu O (x = 0,0.1,0.2,0.3 and 0.4) superconductors have been investigated using a vibrating sample magnetometer from 20 to 50 K and up to 8 T. Phase analysis shows that most of the (Pb,Sn) dopant enters the Bi-2212 lattice and occupies Bi sites. The current-carrying scale-length analysis has been determined from the reverse leg of the magnetization hysteresis loops and compared to the actual dimensions of the sample. Magnetization hysteresis loops of the (PbSn)-doped sample exhibit strong pinning behaviour in the higher temperature range. The effect of (Pb,Sn) doping on intragranular critical current J was found to be enhanced by one order of magnitude at 50 K. We discuss the experimental results within a model of (PbSn) cluster pinning in blocking layers. Doping by (PbSn) clusters into the Bi-O layers provides effective pinning centres, as well as a large reduction of the resistivity anisotropy.en
dc.relation.ispartofPhysica C: Superconductivity and its Applications
dc.titleEnhancement of critical current density of (Pb,Sn)-doped Bi-2212 superconductors at high temperatureen
dc.contributor.institutionSchool of Physics, Astronomy and Mathematics
dc.contributor.institutionScience & Technology Research Institute
dc.contributor.institutionCentre for Astrophysics Research
dc.description.statusPeer reviewed
rioxxterms.typeJournal Article/Review

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