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dc.contributor.authorMartin, William Eugene
dc.contributor.authorMilam, David
dc.date.accessioned2014-02-20T14:58:58Z
dc.date.available2014-02-20T14:58:58Z
dc.date.issued1982-07
dc.identifier.citationMartin , W E & Milam , D 1982 , ' Gain saturation in Nd:doped laser materials ' IEEE Journal of Quantum Electronics , vol. 18 , no. 7 , pp. 1155-1163 . https://doi.org/10.1109/JQE.1982.1071668
dc.identifier.issn0018-9197
dc.identifier.otherPURE: 2030203
dc.identifier.otherPURE UUID: cde7c1ac-4722-44e9-8c1e-c934042c7dd1
dc.identifier.otherScopus: 0020154269
dc.identifier.urihttp://hdl.handle.net/2299/12873
dc.description.abstractSaturation of gain in Nd:doped silicate, phosphate, and fluorophosphate glasses, and in doped crystals of YAG and YLF was observed during amplification of 1064 and 1053 nm pulses with durations of 1. 0, 9. 0, and 50 ns. Saturation fluences were computed from measured external parameters by means of the Frantz-Nodvik model for a homogeneous amplifier. The resulting values of saturation fluence increase with increasing output fluence and were only slightly greater at 50 ns than at 1 ns, suggesting that the lower level lifetime is less than 1 ns.en
dc.format.extent9
dc.language.isoeng
dc.relation.ispartofIEEE Journal of Quantum Electronics
dc.titleGain saturation in Nd:doped laser materialsen
dc.contributor.institutionSchool of Physics, Astronomy and Mathematics
dc.contributor.institutionScience & Technology Research Institute
dc.description.statusPeer reviewed
dc.identifier.urlhttp://www.scopus.com/inward/record.url?scp=0020154269&partnerID=8YFLogxK
dc.relation.schoolSchool of Physics, Astronomy and Mathematics
rioxxterms.versionofrecordhttps://doi.org/10.1109/JQE.1982.1071668
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue
herts.rights.accesstyperestrictedAccess


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