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dc.contributor.authorHill, C.
dc.contributor.authorSun, Y.
dc.contributor.authorSzczepanski, S.
dc.date.accessioned2010-08-12T13:39:02Z
dc.date.available2010-08-12T13:39:02Z
dc.date.issued2000
dc.identifier.citationHill , C , Sun , Y & Szczepanski , S 2000 , Low noise, low distortion, high frequency, fully differential CMOS transconductor . in In: Procs of IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2000 . Institute of Electrical and Electronics Engineers (IEEE) , pp. 600-603 . https://doi.org/10.1109/APCCAS.2000.913572
dc.identifier.isbn0-7803-6253-5
dc.identifier.otherdspace: 2299/4769
dc.identifier.urihttp://hdl.handle.net/2299/4769
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dc.description.abstractThis paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 Vpk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved.en
dc.format.extent340325
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofIn: Procs of IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2000
dc.titleLow noise, low distortion, high frequency, fully differential CMOS transconductoren
dc.contributor.institutionSchool of Engineering and Technology
dc.contributor.institutionSchool of Health and Social Work
dc.contributor.institutionSchool of Physics, Engineering & Computer Science
dc.contributor.institutionDepartment of Engineering and Technology
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionCommunications and Intelligent Systems
rioxxterms.versionofrecord10.1109/APCCAS.2000.913572
rioxxterms.typeOther
herts.preservation.rarelyaccessedtrue


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