Browsing Research publications by Author "Yang, Sheng"

Now showing items 1-3 of 3

    • Aging Benefits in Nanometer CMOS Designs 

      Rossi, Daniele; Tenentes, Vasileios; Yang, Sheng; Khursheed, Saqib; Al-Hashimi, Bashir M. (2016-05-02)
      n this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption ...

    • Coarse-grained Online Monitoring of BTI Aging by Reusing Power Gating Infrastructure 

      Tenentes, Vasileios; Rossi, Daniele; Yang, Sheng; Khursheed, Saqib; Al-Hashimi, Bashir M.; Gunn, Steve R. (2017-04-01)
      In this paper, we present a novel coarse-grained technique for monitoring online the bias temperature instability (BTI) aging of circuits by exploiting their power gating infrastructure. The proposed technique relies on ...

    • Reliable Power Gating With NBTI Aging Benefits 

      Rossi, Daniele; Tenentes, Vasileios; Yang, Sheng; Khursheed, Saqib; Al-Hashimi, Bashir M. (2016-02-15)
      In this paper, we show that negative bias temperature instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime (LT), presents considerable benefits for ...