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dc.contributor.authorChen, W.
dc.contributor.authorAdams, R.G.
dc.contributor.authorCalcraft, L.
dc.contributor.authorDavey, N.
dc.contributor.authorSteuber, Volker
dc.date.accessioned2007-10-01T09:56:49Z
dc.date.available2007-10-01T09:56:49Z
dc.date.issued2007
dc.identifier.citationChen , W , Adams , R G , Calcraft , L , Davey , N & Steuber , V 2007 , ' High capacity associative memory with bipolar and binary, biased patterns ' , Proceedings of UKCI, London , vol. 2007 .
dc.identifier.otherdspace: 2299/769
dc.identifier.urihttp://hdl.handle.net/2299/769
dc.description.abstractThe high capacity associative memory model is interesting due to its significantly higher capacity when compared with the standard Hopfield model. These networks can use either bipolar or binary patterns, which may also be biased. This paper investigates the performance of a high capacity associative memory model trained with biased patterns, using either bipolar or binary representations. Our results indicate that the binary network performs less well under low bias, but better in other situations, compared with the bipolar network.en
dc.format.extent5
dc.format.extent428926
dc.language.isoeng
dc.relation.ispartofProceedings of UKCI, London
dc.titleHigh capacity associative memory with bipolar and binary, biased patternsen
dc.contributor.institutionSchool of Computer Science
dc.contributor.institutionScience & Technology Research Institute
dc.contributor.institutionCentre for Computer Science and Informatics Research
dc.contributor.institutionDepartment of Computer Science
dc.contributor.institutionSchool of Physics, Engineering & Computer Science
dc.contributor.institutionCentre of Data Innovation Research
dc.contributor.institutionCentre for Future Societies Research
dc.description.statusPeer reviewed
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue


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