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        Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures

        Author
        Defforge, Thomas
        Coudron, L.
        Gautier, Gael
        Kouassi, Sebastien
        Vervisch, Wilfried
        Tran Van, Francois
        Ventura, Laurent
        Attention
        2299/8247
        Abstract
        In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed.
        Publication date
        2011
        Published in
        physica status solidi (c)
        Published version
        https://doi.org/10.1002/pssc.201000028
        Other links
        http://hdl.handle.net/2299/8247
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