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        Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

        Author
        Amin-Chalhoub, E.
        Semmar, N.
        Coudron, L.
        Gautier, Gael
        Boulmer-Leborgne, C.
        Petit, A.
        Gaillard, M.
        Mathias, J.
        Millon, E.
        Attention
        2299/8452
        Abstract
        Thermal properties of two types of porous silicon are studied using the pulsed-photothermal method (PPT). This method is based on a pulsed-laser source in the nanosecond regime. A 1D analytical model is coupled with the PPT technique in order to determine thermal properties of the studied samples (thermal conductivity and volumetric heat capacity). At first, a bulk single crystal silicon sample and a titanium thin film deposited on a single crystal silicon substrate are studied in order to validate the PPT method. Porous silicon samples are elaborated with two different techniques, the sintering technique for macroporous silicon and the electrochemical etching method for mesoporous silicon. Metallic thin films are deposited on these two substrates by magnetron sputtering. Finally, the thermal properties of macroporous (30% of porosity and pores diameter between 100 and 1000 nm) and mesoporous silicon (30% and 15% of porosity and pores diameter between 5 and 10 nm) are determined in this work and it is found that thermal conductivity of macroporous (73Wm(-1) K-1) and mesoporous (between 80 and 50Wm(-1) K-1) silicon is two times lower than the single crystal silicon (140Wm(-1) K-1).
        Publication date
        2011-09-07
        Published in
        Journal of Physics D: Applied Physics
        Published version
        https://doi.org/10.1088/0022-3727/44/35/355401
        Other links
        http://hdl.handle.net/2299/8452
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