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dc.contributor.authorWang, F.
dc.contributor.authorHelian, N.
dc.contributor.authorWu, S.
dc.contributor.authorLim, M-G.
dc.contributor.authorGuo, Y.K.
dc.contributor.authorParker, M.A.
dc.date.accessioned2013-01-14T15:28:57Z
dc.date.available2013-01-14T15:28:57Z
dc.date.issued2010
dc.identifier.citationWang , F , Helian , N , Wu , S , Lim , M-G , Guo , Y K & Parker , M A 2010 , ' Delayed switching in memristors and memristive systems ' , IEEE Electron Device Letters , vol. 31 , no. 7 , pp. 755-757 . https://doi.org/10.1109/LED.2010.2049560
dc.identifier.issn0741-3106
dc.identifier.otherdspace: 2299/4693
dc.identifier.otherORCID: /0000-0001-6687-0306/work/64003382
dc.identifier.urihttp://hdl.handle.net/2299/9622
dc.description.abstractIt was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge $q$ or flux $varphi$ is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.en
dc.format.extent398737
dc.language.isoeng
dc.relation.ispartofIEEE Electron Device Letters
dc.titleDelayed switching in memristors and memristive systemsen
dc.contributor.institutionSchool of Computer Science
dc.contributor.institutionScience & Technology Research Institute
dc.description.statusPeer reviewed
rioxxterms.versionofrecord10.1109/LED.2010.2049560
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue


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