Thick Microporous Silicon Layers Etching Involving p(+)n Back Side Hole Injection in Highly Resistive n-Type Substrates
Author
Coudron, Loic
Gautier, Gael
Morillon, Benjamin
Kouassi, Sebastien
Defforge, Thomas
Ventura, Laurent
Attention
2299/9792
Abstract
Anodization studies on low-doped n-type silicon in aqueous electrolytes have systematically shown the formation of macropores. In this paper, we show the possibility to produce microporous silicon in low-doped n-type substrates. We use the temperature gradient zone melting doping technique to realize a deep back side p-n junction as a hole provider to obtain microporous silicon layers. It is believed that the transition from macroporous to microporous formation is linked to hole injection to the anodic HF vertical bar Si interface. To corroborate this hypothesis, we have investigated the back side p-n junction injection efficiency by Synopsis Sentaurus simulations.