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        Thick Microporous Silicon Layers Etching Involving p(+)n Back Side Hole Injection in Highly Resistive n-Type Substrates

        Author
        Coudron, Loic
        Gautier, Gael
        Morillon, Benjamin
        Kouassi, Sebastien
        Defforge, Thomas
        Ventura, Laurent
        Attention
        2299/9792
        Abstract
        Anodization studies on low-doped n-type silicon in aqueous electrolytes have systematically shown the formation of macropores. In this paper, we show the possibility to produce microporous silicon in low-doped n-type substrates. We use the temperature gradient zone melting doping technique to realize a deep back side p-n junction as a hole provider to obtain microporous silicon layers. It is believed that the transition from macroporous to microporous formation is linked to hole injection to the anodic HF vertical bar Si interface. To corroborate this hypothesis, we have investigated the back side p-n junction injection efficiency by Synopsis Sentaurus simulations.
        Publication date
        2011
        Published in
        Electrochemical and Solid-State Letters
        Published version
        https://doi.org/10.1149/1.3507411
        Other links
        http://hdl.handle.net/2299/9792
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