A 40-GHz Load Modulated Balanced Power Amplifier using Unequal Power Splitter and Phase Compensation Network in 45-nm SOI CMOS

In this work, a ten-way power-combined poweramplifier is designed using a load modulated balanced amplifier(LMBA)-based architecture. To provide the required magnitudeand phase controls between the main and control-signal paths ofthe LMBA, an unequal power splitter and a phase compensationnetwork are proposed. As proof of concept, the designed poweramplifier is implemented in a 45-nm SOI CMOS process. At 40GHz, it delivers a 25.1 dBm Psat with a peak power-addedefficiency (PAE) of 27.9%. At 6-dB power back-off level, itachieves 1.39 times drain efficiency enhancement over an idealClass-B power amplifier. Using a 200-MHz single-carrier 64-QAMsignal, the designed amplifier delivers an average output power of16.5 dBm with a PAE of 13.1% at an EVMrms of -23.9 dB andACPR of -25.3 dBc. The die size, including all testing pads, is only1.92 mm2. To the best of the authors’ knowledge, compared withthe other recently published silicon-based LMBAs, this designachieves the highest Psat.