Thick Microporous Silicon Layers Etching Involving p(+)n Back Side Hole Injection in Highly Resistive n-Type Substrates
Coudron, Loic, Gautier, Gael, Morillon, Benjamin, Kouassi, Sebastien, Defforge, Thomas and Ventura, Laurent
(2011)
Thick Microporous Silicon Layers Etching Involving p(+)n Back Side Hole Injection in Highly Resistive n-Type Substrates.
Electrochemical and Solid-State Letters, 14 (1).
H24-H26.
ISSN 1099-0062
Anodization studies on low-doped n-type silicon in aqueous electrolytes have systematically shown the formation of macropores. In this paper, we show the possibility to produce microporous silicon in low-doped n-type substrates. We use the temperature gradient zone melting doping technique to realize a deep back side p-n junction as a hole provider to obtain microporous silicon layers. It is believed that the transition from macroporous to microporous formation is linked to hole injection to the anodic HF vertical bar Si interface. To corroborate this hypothesis, we have investigated the back side p-n junction injection efficiency by Synopsis Sentaurus simulations.
Item Type | Article |
---|---|
Keywords | p-type silicon, porous silicon, formation mechanism |
Date Deposited | 15 May 2025 12:23 |
Last Modified | 30 May 2025 23:50 |
-
picture_as_pdf - Coudron_ECSL_2011.pdf
-
subject - Published Version
-
lock - Restricted to Repository staff only
Request a copy
Downloads