Delayed switching in memristors and memristive systems

Wang, F., Helian, N., Wu, S., Lim, M-G., Guo, Y.K. and Parker, M.A. (2010) Delayed switching in memristors and memristive systems. IEEE Electron Device Letters, 31 (7). pp. 755-757. ISSN 0741-3106
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It was found that the switching in a memristor takes place with a time delay (this peculiar feature is named “the delayed switching”). This feature has been verified by a circuit-based experiment. The physical interpretation of this phenomenon is that an electron element possesses certain inertia, i.e., charge $q$ or flux $varphi$ is inertial with the tendency to remain unchanged (settle to some equilibrium state). It cannot respond as rapidly as the fast variation in the excitation waveform and always takes a finite but small time interval to change its resistance value, as it must take place in a memristor or memristive system. In addition, a potential application of using this feature in ultradense computer memory has been discussed.


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