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        Memristor-based random access memory: The delayed switching effect could revolutionize memory design

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        Final Accepted Version (PDF, 533Kb)
        Author
        Wang, Frank
        Chua, Leon O.
        Helian, Na
        Attention
        2299/18154
        Abstract
        Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.
        Publication date
        2016-04-25
        Published in
        15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
        Published version
        https://doi.org/10.1109/NVMTS.2015.7457481
        Other links
        http://hdl.handle.net/2299/18154
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