dc.contributor.author | Wang, Frank | |
dc.contributor.author | Chua, Leon O. | |
dc.contributor.author | Helian, Na | |
dc.date.accessioned | 2017-05-03T16:22:58Z | |
dc.date.available | 2017-05-03T16:22:58Z | |
dc.date.issued | 2016-04-25 | |
dc.identifier.citation | Wang , F , Chua , L O & Helian , N 2016 , Memristor-based random access memory: The delayed switching effect could revolutionize memory design . in 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 . Institute of Electrical and Electronics Engineers (IEEE) , Beijing, China , Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th , Beijing , China , 12/10/15 . https://doi.org/10.1109/NVMTS.2015.7457481 | |
dc.identifier.citation | conference | |
dc.identifier.isbn | 978-1-5090-2126-0 | |
dc.identifier.other | ORCID: /0000-0001-6687-0306/work/64003377 | |
dc.identifier.uri | http://hdl.handle.net/2299/18154 | |
dc.description | Frank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015 | |
dc.description.abstract | Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density. | en |
dc.format.extent | 8 | |
dc.format.extent | 545812 | |
dc.language.iso | eng | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.ispartof | 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 | |
dc.title | Memristor-based random access memory: The delayed switching effect could revolutionize memory design | en |
dc.contributor.institution | Centre for Computer Science and Informatics Research | |
dc.contributor.institution | School of Computer Science | |
dc.contributor.institution | Biocomputation Research Group | |
dc.identifier.url | http://ieeexplore.ieee.org/document/7457481/ | |
rioxxterms.versionofrecord | 10.1109/NVMTS.2015.7457481 | |
rioxxterms.type | Other | |
herts.preservation.rarelyaccessed | true | |