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dc.contributor.authorWang, Frank
dc.contributor.authorChua, Leon O.
dc.contributor.authorHelian, Na
dc.date.accessioned2017-05-03T16:22:58Z
dc.date.available2017-05-03T16:22:58Z
dc.date.issued2016-04-25
dc.identifier.citationWang , F , Chua , L O & Helian , N 2016 , Memristor-based random access memory: The delayed switching effect could revolutionize memory design . in 15th Non-Volatile Memory Technology Symposium (NVMTS), 2015 . IEEE , Beijing, China , Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th , Beijing , China , 12/10/15 . https://doi.org/10.1109/NVMTS.2015.7457481
dc.identifier.citationconference
dc.identifier.isbn978-1-5090-2126-0
dc.identifier.otherPURE: 11108776
dc.identifier.otherPURE UUID: ac614353-be32-4949-8430-0b6cb0a357bd
dc.identifier.otherScopus: 84978143569
dc.identifier.otherORCID: /0000-0001-6687-0306/work/64003377
dc.identifier.urihttp://hdl.handle.net/2299/18154
dc.descriptionFrank Wang, Leon O. Chua, and Na Helian, 'Memristor-based random access memory: The delayed switching effect could revolutionize memory design' paper presented at the 15th Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China 12-14 October 2015
dc.description.abstractMemristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to selectively address any desired memory cell in a crossbar array. The analysis shows this is a must-be in a memristor with a piecewise-linear φ-q curve. A “circuit model”-based experiment has verified the delayed switching feature. It is demonstrated that memristors can be packed at least twice as densely as semiconductors, achieving a significant breakthrough in storage density.en
dc.format.extent8
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartof15th Non-Volatile Memory Technology Symposium (NVMTS), 2015
dc.rightsOpen
dc.titleMemristor-based random access memory: The delayed switching effect could revolutionize memory designen
dc.contributor.institutionCentre for Computer Science and Informatics Research
dc.contributor.institutionSchool of Computer Science
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7457481/
dc.description.versiontypeFinal Accepted Version
dcterms.dateAccepted2016-04-25
rioxxterms.versionAM
rioxxterms.versionofrecordhttps://doi.org/10.1109/NVMTS.2015.7457481
rioxxterms.typeOther
herts.preservation.rarelyaccessedtrue
herts.rights.accesstypeOpen


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