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dc.contributor.authorAmin-Chalhoub, E.
dc.contributor.authorSemmar, N.
dc.contributor.authorCoudron, L.
dc.contributor.authorGautier, Gael
dc.contributor.authorBoulmer-Leborgne, C.
dc.contributor.authorPetit, A.
dc.contributor.authorGaillard, M.
dc.contributor.authorMathias, J.
dc.contributor.authorMillon, E.
dc.date.accessioned2012-04-30T23:45:25Z
dc.date.available2012-04-30T23:45:25Z
dc.date.issued2011-09-07
dc.identifier.citationAmin-Chalhoub , E , Semmar , N , Coudron , L , Gautier , G , Boulmer-Leborgne , C , Petit , A , Gaillard , M , Mathias , J & Millon , E 2011 , ' Thermal conductivity measurement of porous silicon by the pulsed-photothermal method ' , Journal of Physics D: Applied Physics , vol. 44 , no. 35 , 355401 . https://doi.org/10.1088/0022-3727/44/35/355401
dc.identifier.issn0022-3727
dc.identifier.otherPURE: 680147
dc.identifier.otherPURE UUID: 2645e8f6-539e-4e74-a38e-306f089e4485
dc.identifier.otherWOS: 000294762700014
dc.identifier.otherScopus: 80051948124
dc.identifier.urihttp://hdl.handle.net/2299/8452
dc.description.abstractThermal properties of two types of porous silicon are studied using the pulsed-photothermal method (PPT). This method is based on a pulsed-laser source in the nanosecond regime. A 1D analytical model is coupled with the PPT technique in order to determine thermal properties of the studied samples (thermal conductivity and volumetric heat capacity). At first, a bulk single crystal silicon sample and a titanium thin film deposited on a single crystal silicon substrate are studied in order to validate the PPT method. Porous silicon samples are elaborated with two different techniques, the sintering technique for macroporous silicon and the electrochemical etching method for mesoporous silicon. Metallic thin films are deposited on these two substrates by magnetron sputtering. Finally, the thermal properties of macroporous (30% of porosity and pores diameter between 100 and 1000 nm) and mesoporous silicon (30% and 15% of porosity and pores diameter between 5 and 10 nm) are determined in this work and it is found that thermal conductivity of macroporous (73Wm(-1) K-1) and mesoporous (between 80 and 50Wm(-1) K-1) silicon is two times lower than the single crystal silicon (140Wm(-1) K-1).en
dc.format.extent8
dc.language.isoeng
dc.relation.ispartofJournal of Physics D: Applied Physics
dc.subjectTHIN-FILMS
dc.subjectLAYERS
dc.subjectRADIOMETRY
dc.subjectSYSTEM
dc.titleThermal conductivity measurement of porous silicon by the pulsed-photothermal methoden
dc.contributor.institutionMicrofluidics and Microengineering
dc.contributor.institutionCentre for Engineering Research
dc.contributor.institutionCentre for Research in Biodetection Technologies
dc.contributor.institutionSchool of Engineering and Computer Science
dc.contributor.institutionDepartment of Engineering and Technology
dc.contributor.institutionBioEngineering
dc.contributor.institutionMicro Electro-Mechanical Systems
dc.description.statusPeer reviewed
dc.relation.schoolSchool of Engineering and Computer Science
dcterms.dateAccepted2011-09-07
rioxxterms.versionVoR
rioxxterms.versionofrecordhttps://doi.org/10.1088/0022-3727/44/35/355401
rioxxterms.typeJournal Article/Review
herts.preservation.rarelyaccessedtrue


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