Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures

Defforge, Thomas, Coudron, L., Gautier, Gael, Kouassi, Sebastien, Vervisch, Wilfried, Tran Van, Francois and Ventura, Laurent (2011) Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures. physica status solidi (c), 8 (6). pp. 1815-1819. ISSN 1610-1642
Copy

In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed.

visibility_off picture_as_pdf

picture_as_pdf
L_Coudron_4.pdf
subject
Published Version
lock
Restricted to Repository staff only

Request Copy

Atom BibTeX OpenURL ContextObject in Span OpenURL ContextObject Dublin Core MPEG-21 DIDL Data Cite XML EndNote HTML Citation METS MODS RIOXX2 XML Reference Manager Refer ASCII Citation
Export

Downloads