Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures
Defforge, Thomas, Coudron, L., Gautier, Gael, Kouassi, Sebastien, Vervisch, Wilfried, Tran Van, Francois and Ventura, Laurent
(2011)
Effect of low temperature and concentration KOH etching on high aspect ratio silicon structures.
physica status solidi (c), 8 (6).
pp. 1815-1819.
ISSN 1610-1642
In this paper, the effect of low concentrated alkaline solutions etching on texturized silicon structures at low temperatures has been studied. The silicon samples have been previously etched either from regular arrays by HF anodization on prepatterned substrates or by Deep Reactive Ion Etching (DRIE). After immersion in a low concentrated potassium hydroxide (KOH) solution mixed with isopropyl alcohol (IPA), the quality of the silicon sidewalls has been improved by an anisotropic etching. Thus, the trenches wall surface has been smoothed and planed.
Item Type | Article |
---|---|
Identification Number | 10.1002/pssc.201000028 |
Date Deposited | 15 May 2025 12:23 |
Last Modified | 10 Sep 2025 20:35 |
Full text not available from this repository.
Downloads
?
Total file downloads from UHRA since January 2020. For more information on metrics see the IRUS guide.